Dr. Boon Kok Tan

Abstract:

Travelling wave parametric amplifiers (TWPAs) made from highly non-linear reactive superconducting thin films have been demonstrated to be a potentially viable quantum-noise-limited amplifier technology for various fundamental physics platforms, including microwave/mm/sub-mm astronomy, dark matter search experiments, neutrino mass experiments, and qubit readout. We present a kinetic inductance TWPA consisting of a patterned titanium nitride film on a sapphire substrate, which comprises a coplanar waveguide (CPW) with a continuous, smoothed periodic loading (PL) structure that modulates the characteristic impedance of the CPW in a double sinusoidal fashion. This double sinusoidal modulation creates much stronger dispersion features than a conventional PL design, which allows for phase matching and pump harmonic suppression over a much shorter transmission length, potentially leading to reduced losses. In this paper, we shall discuss in detail the design of our TWPA and present the predicted gain-bandwidth characteristics from electromagnetic simulations.

Abstract:

We report the design of a 230 GHz dual-polarization (2-pol) balanced Superconductor-Insulator-Superconductor (SIS) receiver that can be easily extended for large array applications. We achieve this by integrating all of the required radio frequency (RF) and local oscillator (LO) components on-chip using planar superconducting circuit technology, therefore simplifying the architecture of the receiver block substantially. One major feature of our design is the planar LO injection scheme, which couples the LO with a single on-chip antenna and distributes the LO power via a series of microstrip couplers to the balanced mixers of each polarization of each pixel. In this paper, we describe in detail the design and layout of the individual planar circuit components of our receiver, as well as how they are integrated to form a full receiver. We then conclude the paper with the design of a 2-pixel array demonstrator, illustrating how the balanced SIS mixer and the LO distribution network can be extended to form an even larger array.

Abstract:

Supra-THz heterodyne mixers generally have higher conversion loss compared to the millimetre-wave mixers. Hence, the overall receiver noise temperature becomes increasingly dominated by the first-stage semiconductor low noise amplifier (LNA), which still struggles to achieve quantum-limited noise performance. Here, we aim to develop a Josephson junction travelling wave parametric amplifier (JTWPA) that can achieve high gain over broad bandwidth but with better noise performance to replace these Intermediate Frequency (IF) amplifiers. JTWPAs are typically considered not suitable for astronomical receivers due to their low power handling capability. However, the critical current of the Josephson junctions (JJ) can be easily engineered to match the output power of the front-end detectors. Nevertheless, this may results in the requirement of a higher number of JJs as the junction inductance is in reverse relation with the critical current. Therefore, in this paper, we aim to explore the different design parameters required for developing a JTWPA with a dynamic range compatible for readout a Superconductor-Insulator-Superconductor (SIS) mixer, as an example. Here, we present two JTWPA models that are suitable for the objective, one requiring 3,142 Nb/Al-AlOx/Nb junctions with a maximum gain of 23 dB, and the other with a lower gain at 16 dB but requires only 1,317 JJs. We then compare the SIS receiver noise performance utilising these JTWPAs with that of using a conventional high gain High Electron Mobility Transistor (HEMT) amplifier. We show that we can improve the receiver sensitivity significantly by either cascading two 23 dB gain JTWPA or using a combination of a 16 dB gain JTWPA and a HEMT amplifier. We conclude that the former option more suitable for large detector array applications as it completely replaces the high heat dissipation HEMT amplifiers; while the latter option is favourable at this stage for low pixel count application as it is easier to fabricate a lower number of junctions JTWPA.