Electromagnetic performance comparisons of 0.85 THz integrated bias-tee SIS mixers with twin-junction and end-loaded tuning schemes
Abstract:
We compare the design of two 0.85 THz SIS mixers fed with a radial probe antenna aligned to the E-Plane of the input full-height rectangular waveguide connected to a drilled smooth-walled horn. Both designs employ the same 0.5 µm2 hybrid Nb/AlN/NbN tunnel junction technology, sandwiched between a NbTiN ground and aluminium wiring layer fabricated on top of a 40 µm quartz substrate. The two designs is differed by how we tune out the unwanted junction capacitance for broadband performance. The first design uses the commonly-used twin-junction tuning scheme; whilst the second design utilises an end-loaded scheme. We successfully achieve close to 2× the double sideband quantum noise performance for both schemes, but the twin-junction design is less sensitive to fabrication accuracy of planar circuit components utilised. However, the end-loaded design offers a much better IF bandwidth performance, almost twice wider than the twin-junction design. The need for an ultra-wide IF bandwidth mixer is becoming more pressing and important for the future and up-coming upgrades of various millimetre (mm) and sub-mm astronomical instruments, hence we conclude that the end-loaded design is a better solution for the THz heterodyne mixing applications.A 230-GHz endfire SIS mixer with near quantum-limited performance
Abstract:
In this letter, we report the near quantum-limited performance of a 230 GHz endfire superconductor-insulator-superconductor (SIS) mixer utilizing a Nb/Al-AlOx/Nb trilayer. An important feature of this mixer is its use of a unilateral finline for the waveguide-to-planar circuit transition, which allows for a wide radiofrequency (RF) bandwidth, a simple waveguide structure with easy alignment, and for the mixer chip to be aligned along the optical axis. Each of these factors is beneficial in the construction of large-format focal plane arrays. We tested the new finline mixer from 210 to 260 GHz in a liquid helium cryostat at ∼ 4 K. The best recorded noise temperature was approximately twice the quantum limit, which is comparable to conventional radial probe mixers. This suggests that endfire SIS mixers can be used in large format arrays, comprising 100s or even 1000s of SIS mixing elements, while retaining state-of-the-art quantum mixing performance.Engineering the thin film characteristics for optimal performance of superconducting kinetic inductance amplifiers using a rigorous modelling technique
Abstract:
Background: Kinetic Inductance Travelling Wave Parametric Amplifiers (KITWPAs) are a new variant of superconducting amplifier that can potentially achieve high gain with quantum-limited noise performance over broad bandwidth, which is important for many ultra-sensitive experiments. In this paper, we present a novel modelling technique that can better capture the electromagnetic behaviour of a KITWPA without the translation symmetry assumption, allowing us to flexibly explore the use of more complex transmission line structures and better predict their performance.
Methods: In order to design a KITWPA with optimal performance, we investigate the use of different superconducting thin film materials, and compare their pros and cons in forming a high-gain low-loss medium feasible for amplification. We establish that if the film thickness can be controlled precisely, the material used has less impact on the performance of the device, as long as it is topologically defect-free and operating within its superconducting regime. With this insight, we propose the use of Titanium Nitride (TiN) film for our KITWPA as its critical temperature can be easily altered to suit our applications. We further investigate the topological effect of different commonly used superconducting transmission line structures with the TiN film, including the effect of various non-conducting materials required to form the amplifier.
Results: Both of these comprehensive studies led us to two configurations of the KITWPA: 1) A low-loss 100 nm thick TiN coplanar waveguide amplifier, and 2) A compact 50 nm TiN inverted microstrip amplifier. We utilise the novel modelling technique described in the first part of the paper to explore and investigate the optimal design and operational setup required to achieve high gain with the broadest bandwidth for both KITWPAs, including the effect of loss.
Conclusions: Finally, we conclude the paper with the actual layout and the predicted gain-bandwidth product of our KITWPAs.